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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL16218/D Designer'sTM Data Sheet SCANSWITCHTM MJL16218* *Motorola Preferred Device NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJL16218 is a state-of-the-art SWITCHMODETM bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page, monochrome monitors. * * * * 1500 Volt Collector-Emitter Breakdown Capability Typical Dynamic Desaturation Specified (New Turn-Off Characteristic) Application Specific State-of-the-Art Die Design Fast Switching: 175 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ) * Low Saturation Voltage: 0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive * Low Collector-Emitter Leakage Current -- 250 A Max at 1500 Volts -- VCES * High Emitter-Base Breakdown Capability For High Voltage Off Drive Circuits -- 8.0 Volts (Min) MAXIMUM RATINGS Rating Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current -- Continuous -- Pulsed (1) Base Current -- Continuous -- Pulsed (1) Maximum Repetitive Emitter-Base Avalanche Energy Total Power Dissipation @ TC = 25C @ TC = 100C Derated above TC = 25C Operating and Storage Temperature Range Symbol VCES VCEO(sus) VEBO IC ICM IB IBM W (BER) PD POWER TRANSISTOR 15 AMPERES 1500 VOLTS -- VCES 170 WATTS CASE 340G-02, STYLE 2 TO-3PBL Value 1500 650 8.0 15 20 7.0 14 0.2 170 39 1.49 - 55 to 125 Unit Vdc Vdc Vdc Adc Adc mJ Watts W/C C TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case Lead Temperature for Soldering Purposes 1/8 from the case for 5 seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided. Symbol RJC TL Max 0.67 275 Unit C/W C Designer's and SCANSWITCH are trademarks of Motorola, Inc. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1 MJL16218 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS (2) Collector Cutoff Current (VCE = 1500 V, VBE = 0 V) (VCE = 1200 V, VBE = 0 V) Emitter-Base Leakage (VEB = 8.0 Vdc, IC = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mA, IC = 0) Collector-Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0) ON CHARACTERISTICS (2) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 2.0 Adc) (IC = 3.0 Adc, IB = 0.6 Adc) Base-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 1.0 Adc) DC Current Gain (IC = 1.0 A, VCE = 5.0 Vdc) (IC = 12 A, VCE = 5.0 Vdc) VCE(sat) VBE(sat) hFE -- -- -- -- 4.0 0.17 0.14 0.9 24 6.0 1.0 0.5 1.5 -- -- Vdc Vdc -- ICES IEBO V(BR)EBO VCEO(sus) -- -- -- 8.0 650 -- -- -- 11 -- 250 25 25 -- -- Adc Adc Vdc Vdc Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Dynamic Desaturation Interval (IC = 5.5 A, IB1 = 2.2 A, LB = 1.5 H) Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 100 kHz) Gain Bandwidth Product (VCE = 10 Vdc, IC = 0.5 A, ftest = 1.0 MHz) SWITCHING CHARACTERISTICS Inductive Load (IC = 6.0 A, IB = 2.0 A), High Resolution Deflection Simulator Circuit Table 2 Storage Fall Time (2) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. ns tsv tfi -- -- 2000 175 3000 250 tds Cob fT -- -- -- 350 300 0.8 -- 500 -- ns pF MHz SAFE OPERATING AREA 100 18 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 10 10 ms 50 ms 1.0 100 ms 250 ms 0.1 IC/IB = 5 TJ 100C 14 10 6 2 0.01 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1000 0 300 600 900 1200 1500 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Maximum Forward Bias Safe Operating Area Figure 2. Maximum Reverse Bias Safe Operating Area 2 Motorola Bipolar Power Transistor Device Data MJL16218 SAFE OPERATING AREA (continued) FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 1 may be found at any case temperature by using the appropriate curve on Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage- current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 2 gives the RBSOA characteristics. 1 0.8 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.6 THERMAL DERATING 0.4 0.2 0 25 45 65 85 105 125 TC, CASE TEMPERATURE (C) Figure 3. Power Derating Table 1. RBSOA/V(BR)CEO(SUS) Test Circuit 0.02 F H.P. 214 OR EQUIV. P.G. + 0 - 35 V 0.02 F 50 500 100 T1 0V -V (ICpk [ LcoilCC ) V A 50 *IB Vclamp VCC IB V(BR)CEO L = 10 mH RB2 = VCC = 20 Volts *Tektronix *P-6042 or *Equivalent RBSOA L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 IB2 IB1 T.U.T. MR856 +V IC *IC L T1 VCE VCE(pk) -V IC(pk) +- 1 F RB2 2N5337 - 100 + V 11 V 2N6191 20 10 F RB1 A T1 adjusted to obtain IC(pk) Note: Adjust - V to obtain desired VBE(off) at Point A. Motorola Bipolar Power Transistor Device Data 3 MJL16218 TYPICAL ELECTRICAL CHARACTERISTICS 1.0 IC/IB = 2.5 1.0 IC/IB = 5.0 100C 100C V, VOLTAGE (V) 25C 25C 0.1 V, VOLTAGE (V) 0.1 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 4. Typical Collector-Emitter Saturation Voltage Figure 5. Typical Collector-Emitter Saturation Voltage 10 V BE , BASE-EMITTER VOLTAGE (V) V BE , BASE-EMITTER VOLTAGE (V) IC/IB = 2.5 10 IC/IB = 5.0 1.0 25C 100C 1.0 25C 100C 0.1 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0.1 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 6. Typical Emitter-Base Saturation Voltage Figure 7. Typical Emitter-Base Saturation Voltage 4 Motorola Bipolar Power Transistor Device Data MJL16218 TYPICAL ELECTRICAL CHARACTERISTICS (continued) 100 HFE = 2.0 V H FE , DC CURRENT GAIN 100C 25C 10 H FE , DC CURRENT GAIN 100 HFE = 5.0 V 100C 25C 10 1.0 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) 1.0 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) Figure 8. DC Current Gain Figure 9. DC Current Gain 1.0 25C 100C V, VOLTAGE (V) VBE(on) = 5.0 V 0.1 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 10. "On" Voltages Motorola Bipolar Power Transistor Device Data 5 MJL16218 DYNAMIC DESATURATION The SCANSWITCH series of bipolar power transistors are specifically designed to meet the unique requirements of horizontal deflection circuits in computer monitor applications. Historically, deflection transistor design was focused on minimizing collector current fall time. While fall time is a valid figure of merit, a more important indicator of circuit performance as scan rates are increased is a new characteristic, "dynamic desaturation." In order to assure a linear collector current ramp, the output transistor must remain in hard saturation during storage time and exhibit a rapid turn-off transition. A sluggish transition results in serious consequences. As the saturation voltage of the output transistor increases, + 24 V the voltage across the yoke drops. Roll off in the collector current ramp results in improper beam deflection and distortion of the image at the right edge of the screen. Design changes have been made in the structure of the SCANSWITCH series of devices which minimize the dynamic desaturation interval. Dynamic desaturation has been defined in terms of the time required for the VCE to rise from 1.0 to 5.0 volts (Figures 9 and 10) and typical performance at optimized drive conditions has been specified. Optimization of device structure results in a linear collector current ramp, excellent turn-off switching performance, and significantly lower overall power dissipation. Table 2. High Resolution Deflection Application Simulator U2 MC7812 VI G VO N D C2 10 F C1 100 F + + Q2 MJ11016 (IB) R1 1k 6.2 V R5 1k (IC) Q5 MJ11016 R7 2.7 k R8 9.1 k R9 470 + R10 47 C3 10 F C6 100 F + LY C4 0.005 R2 R510 SYNC Q1 R3 250 (DC) 8 C5 0.1 6 VCC OUT GND 2 1 100 V R11 470 1W Q3 MJE 15031 T1 R12 470 1W LB D2 MUR460 CY 7 OSC % R6 1k U1 MC1391P D1 MUR110 VCE Q4 DUT R4 22 BS170 T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec. Turns Ratio = 18:6 Gapped for LP = 30 H LB = 1.5 H CY = 0.01 F LY = 13 H 5 DYNAMIC DESATURATION TIME IS MEASURED FROM VCE = 1 V TO VCE = 5 V IB1 = 2.2 A IB, BASE CURRENT (A) VCE , COLLECTOR-EMITTER VOLTAGE (V) 4 3 2 IB2 = 4.5 A 1 0 0 2 4 TIME (ns) 6 8 tds 10 TIME (2 s/DIV) Figure 11. Deflection Simulator Circuit Base Drive Waveform 6 Figure 12. Definition of Dynamic Desaturation Measurement Motorola Bipolar Power Transistor Device Data MJL16218 PACKAGE DIMENSIONS 0.25 (0.010) -B- -Q- M TB M -T- C U N A R -Y- P K 1 2 3 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ S DIM A B C D E F G H J K L N P Q R U W STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 340G-02 TO-3PBL ISSUE F Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Bipolar Power Transistor Device Data 7 MJL16218 Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 8 Motorola Bipolar Power Transistor Device Data MJL16218/D |
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